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Shenzhen Tengshengda ELECTRIC CO., LTD.
E-mail ice@tsdatech.com Telefono: 86--13825240555
Casa > prodotti > chip di memoria flash CI >
MT440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M450M4M440M4M4M4M4M4
  • MT440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M450M4M440M4M4M4M4M4
MT440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M450M4M440M4M4M4M4M4

MT440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M440M450M4M440M4M4M4M4M4

Dettagli del prodotto
Categoria:
Circuiti integrati (CI) Memoria Memoria
Dimensione della memoria:
2Gbit
Status del prodotto:
Non utilizzato
Tipo di montaggio:
Montaggio superficiale
Pacco:
Nastro e bobina (TR) Nastro di taglio (CT) Digi-Reel®
Serie:
-
DigiKey programmabile:
Non verificato
Interfaccia della memoria:
Parallelamente
Scrivere il tempo del ciclo - parola, pagina:
14.4ns
Confezione del dispositivo del fornitore:
90-VFBGA (8x13)
Tipo di memoria:
Volatile
Mfr:
Micron Technology Inc.
Frequenza dell'orologio:
208 MHz
Voltaggio - Fornitura:
1.7V ~ 1.95V
Tempo di accesso:
5 ns
Confezione / Cassa:
90-VFBGA
Organizzazione della memoria:
64M x 32
Temperatura di funzionamento:
-25°C ~ 85°C (TA)
Tecnologia:
SDRAM - LPDDR mobile
Numero del prodotto di base:
MT4117M2
Formato di memoria:
DRAM
Termini di trasporto & di pagamento
Descrizione
IC DRAM 2GBIT PAR 208MHZ 90VFBGA
Descrizione di prodotto
SDRAM - CI di memoria LPDDR mobile 2Gbit Parallela 208 MHz 5 ns 90-VFBGA (8x13)

Etichette:

chip di memoria flash CI,

Chip del circuito integrato,

Chip di memoria

Prodotti raccomandati

Contattici in qualunque momento

86--13825240555
609 no. 4018, strada baoan, via di Xixiang, Baoan District, Shenzhen, Guangdong
8613825240555
+8613425785954
+8613425785954
ice@tsdatech.com
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