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E-mail ice@tsdatech.com Telefono: 86--13825240555
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Dettagli del prodotto
Categoria:
Circuiti integrati (CI) Memoria Memoria
Dimensione della memoria:
16Gbit
Status del prodotto:
Attivo
Tipo di montaggio:
Montaggio superficiale
Pacco:
Nastro e bobina (TR)
Serie:
Automotive, AEC-Q100
Interfaccia della memoria:
Parallelamente
Scrivere il tempo del ciclo - parola, pagina:
18ns
Confezione del dispositivo del fornitore:
200-TFBGA (10x14.5)
Tipo di memoria:
Volatile
Mfr:
Micron Technology Inc.
Frequenza dell'orologio:
2,133 gigahertz
Voltaggio - Fornitura:
1.06V ~ 1.17V
Confezione / Cassa:
200-TFBGA
Organizzazione della memoria:
512M x 32
Temperatura di funzionamento:
-40°C ~ 125°C (TC)
Tecnologia:
SDRAM - LPDDR4X mobile
Tempo di accesso:
3,5 NS
Formato di memoria:
DRAM
Termini di trasporto & di pagamento
Descrizione
IC DRAM 16GBIT 2.133GHZ 200WFBGA
Descrizione di prodotto
SDRAM - Mobile LPDDR4X Memory IC 16Gbit Parallelo 2,133 GHz 3,5 ns 200-TFBGA (10x14.5)

Etichette:

chip di memoria flash CI,

Chip del circuito integrato,

Chip di memoria

Prodotti raccomandati

Contattici in qualunque momento

86--13825240555
609 no. 4018, strada baoan, via di Xixiang, Baoan District, Shenzhen, Guangdong
8613825240555
+8613425785954
+8613425785954
ice@tsdatech.com
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