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Shenzhen Tengshengda ELECTRIC CO., LTD.
E-mail ice@tsdatech.com Telefono: 86--13825240555
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MT5205M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M
  • MT5205M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M

MT5205M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M4M

Dettagli del prodotto
Categoria:
Circuiti integrati (CI) Memoria Memoria
Dimensione della memoria:
48Gbit
Status del prodotto:
Attivo
Tipo di montaggio:
Montaggio superficiale
Pacco:
Nastro e bobina (TR)
Serie:
Automotive, AEC-Q100
DigiKey programmabile:
Non verificato
Interfaccia della memoria:
Parallelamente
Scrivere il tempo del ciclo - parola, pagina:
18ns
Confezione del dispositivo del fornitore:
556-WFBGA (12.4x12.4)
Tipo di memoria:
Volatile
Mfr:
Micron Technology Inc.
Frequenza dell'orologio:
2,133 gigahertz
Voltaggio - Fornitura:
1.06V ~ 1.17V
Confezione / Cassa:
556-TFBGA
Organizzazione della memoria:
768M x 64
Temperatura di funzionamento:
-40°C ~ 105°C (TC)
Tecnologia:
SDRAM - LPDDR4 mobile
Tempo di accesso:
3,5 NS
Formato di memoria:
DRAM
Termini di trasporto & di pagamento
Descrizione
IC DRAM
Descrizione di prodotto
SDRAM - Memoria mobile LPDDR4 IC 48Gbit parallelo 2,133 GHz 3,5 ns 556-WFBGA (12.4x12.4)

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86--13825240555
609 no. 4018, strada baoan, via di Xixiang, Baoan District, Shenzhen, Guangdong
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